MBRM140T1 |
RFQ for MBRM140T1 Required Field |
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| Technical/Catalog Information | MBRM140T1G |
| Vendor | ON Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 40V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 550mV @ 1A |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 500A @ 40V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Surface Mount |
| Package / Case | Powermite? |
| Packaging | Digi-Reel? |
| Capacitance @ Vr, F | - |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MBRM140T1G MBRM140T1G MBRM140T1GOSDKR ND MBRM140T1GOSDKRND MBRM140T1GOSDKR |
| Product | Manufacturers | Pack | D/C |
| MBRM140T1 | - | SOD120 | 06+ |
The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop- reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. With its unique heatsink design, the Powermite has the same thermal performance as the SMA while being 50% smaller in footprint area, and delivering one of the lowest height profiles, < 1.1 mm in the industry. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are ac/dc and dc-dc converters, reverse battery protection, and "Oring" of multiple supply voltages and any other application where performance and size are critical.
Features |
| • Low Profile - Maximum Height of 1.1 mm• Small Footprint - Footprint Area of 8.45 mm2• Low VF Provides Higher Efficiency and Extends Battery Life• Supplied in 12 mm Tape and Reel• Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink |
| Characteristic | Symbol | Value | Unit |
| Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage |
VRRM VRWM VRM |
30 | V |
| Average Rectified Forward Current (At Rated VR, TC = 135°C) | IO | 1.0 | A |
| Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 135°C) |
IFRM | 2.0 | A |
| Non-Repetitive Peak Surge Current (Non-Repetitive peak surge current, halfwave, single phase, 60 Hz) |
IFSM | 50 | A |
| Storage Temperature | TSTG | -55 to +150 | °C |
| Operating Junction Temperature | Tj | -55 to +125 | °C |
| Voltage Rate of Change (Rated VR, TJ = 25°C) | dv/dt | 10000 | V/s |
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